Appearance of a Tunneling Spectrum Peak by Electrical Breakdown of Tunneling Junction

Inelastic electron tunneling spectra of metal/AlO x /metal junctions were measured at 77 K. For as-made samples up to 0.3 V, the only observable peak occurred near 0.04 V. After electrical breakdown induced both by a ramped voltage stress and by a constant voltage stress, a peak appeared near 0.09 V...

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Veröffentlicht in:IEEE transactions on magnetics 2008-11, Vol.44 (11), p.2589-2591
Hauptverfasser: Horikiri, K., Shiiki, K.
Format: Artikel
Sprache:eng
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Zusammenfassung:Inelastic electron tunneling spectra of metal/AlO x /metal junctions were measured at 77 K. For as-made samples up to 0.3 V, the only observable peak occurred near 0.04 V. After electrical breakdown induced both by a ramped voltage stress and by a constant voltage stress, a peak appeared near 0.09 V. It is thought that a conduction level, which is about 0.09 eV higher than the Fermi level, was created in AlO x by the electrical breakdown. The breakdown is not thought to be due to a simple short circuit caused by a pinhole or the like.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2008.2003041