Appearance of a Tunneling Spectrum Peak by Electrical Breakdown of Tunneling Junction
Inelastic electron tunneling spectra of metal/AlO x /metal junctions were measured at 77 K. For as-made samples up to 0.3 V, the only observable peak occurred near 0.04 V. After electrical breakdown induced both by a ramped voltage stress and by a constant voltage stress, a peak appeared near 0.09 V...
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Veröffentlicht in: | IEEE transactions on magnetics 2008-11, Vol.44 (11), p.2589-2591 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Inelastic electron tunneling spectra of metal/AlO x /metal junctions were measured at 77 K. For as-made samples up to 0.3 V, the only observable peak occurred near 0.04 V. After electrical breakdown induced both by a ramped voltage stress and by a constant voltage stress, a peak appeared near 0.09 V. It is thought that a conduction level, which is about 0.09 eV higher than the Fermi level, was created in AlO x by the electrical breakdown. The breakdown is not thought to be due to a simple short circuit caused by a pinhole or the like. |
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ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/TMAG.2008.2003041 |