Graded-bandgap quantum-dot lasers and arrays

Novel bandgap-engineered quantum-dot devices are reported: a dual-wavelength laser, a gain-broadened laser/amplifier employing a bandgap-graded cavity, and a multi-wavelength laser array with a 20 nm tuning range at 1280 nm. The devices are realized using a multi-bandgap post-growth intermixing tech...

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Bibliographische Detailangaben
Hauptverfasser:	Yanson, D.A., Marsh, J.H., McDougall, S.D., Kowalski, O.P., Bryce, A.C., Kim, S.-S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing bandgap engineering gain broadening Gallium arsenide III-V semiconductor materials intermixing Laser tuning multiple wavelength laser arrays Optical arrays Optical materials Photonic band gap Quantum dot lasers quantum dots Semiconductor laser arrays Temperature distribution
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Beschreibung
Zusammenfassung:	Novel bandgap-engineered quantum-dot devices are reported: a dual-wavelength laser, a gain-broadened laser/amplifier employing a bandgap-graded cavity, and a multi-wavelength laser array with a 20 nm tuning range at 1280 nm. The devices are realized using a multi-bandgap post-growth intermixing technique.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2008.4703032