Surface Fermi level in GaAsSb alloys grown by MBE on Inp substrates

Surface Fermi level in GaAsSb alloys grown by MBE on Inp substrates

We use photoreflectance spectroscopy to investigate the Fermi level pinning at the surface of GaAsSb. The measurements have been performed on five GaAsSb/Inp UN+ structures. The surface Fermi level is determined versus the Sb concentration.

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Bibliographische Detailangaben
Hauptverfasser: Chouaib, H., Rudno-Rudzinski, W., Apostoluk, A., Bru-Chevallier, C., Lijadi, M., Bove, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
GaAsSb
Indium phosphide
Photoreflectance
Surface Fermi level
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Beschreibung
Zusammenfassung:We use photoreflectance spectroscopy to investigate the Fermi level pinning at the surface of GaAsSb. The measurements have been performed on five GaAsSb/Inp UN+ structures. The surface Fermi level is determined versus the Sb concentration.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2008.4703020