InP/GaAsSb/InP multifinger DHBTs for power applications

We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications. 2-finger 15times1 mum 2 devices demonstrate maximum f T of 221 GHz and maximum f max of 293 GHz when biased at J C = 370 kA/cm 2 and V CE = 1.4V. Moreover we i...

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Hauptverfasser:	Nodjiadjim, V., Riet, M., Scavennec, A., Berdaguer, P., Drisse, O., Derouin, E., Godin, J., Bove, P., Lijadi, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current density Doping Double heterojunction bipolar transistors Fingers Frequency GaAsSb/InP double heterojunction bipolar transistors (DHBTs) III-V semiconductor materials Indium gallium arsenide Indium phosphide multifinger DHBTs Synthetic aperture sonar Voltage
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Beschreibung
Zusammenfassung:	We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications. 2-finger 15times1 mum 2 devices demonstrate maximum f T of 221 GHz and maximum f max of 293 GHz when biased at J C = 370 kA/cm 2 and V CE = 1.4V. Moreover we investigate the limitation of frequency performances with the number of fingers.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2008.4703002