AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

In this paper, we present experimental results on AlSb/InAs HEMTs with deep and shallow mesa using wet and dry etching techniques respectively. Similar electrical results have been obtained using both techniques.

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Bibliographische Detailangaben
Hauptverfasser: Olivier, A., Gehin, T., Desplanque, L., Wallart, X., Roelens, Y., Dambrine, G., Cappy, A., Bollaert, S., Lefebvre, E., Malmkvist, M., Grahn, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
AlSb/InAs
Doping
Dry etching
Fabrication
Gold
HEMT
HEMTs
ICP
Indium phosphide
MODFETs
Resists
Substrates
Wet etching
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Beschreibung
Zusammenfassung:In this paper, we present experimental results on AlSb/InAs HEMTs with deep and shallow mesa using wet and dry etching techniques respectively. Similar electrical results have been obtained using both techniques.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2008.4702979