Dynamic SPICE-simulation of the electrothermal behavior of SOI MOSFET's

Dynamic SPICE-simulation of the electrothermal behavior of SOI MOSFET's

A nonlinear dynamic electrothermal model of the SOI MOSFET is implemented and used in SPICE3. This model is formulated as a set of algebraic and (partial) differential equations which is converted into a SPICE3 netlist automatically by a model translator. Neither is the simulator rewritten nor are S...

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Veröffentlicht in:IEEE transactions on electron devices 1995-11, Vol.42 (11), p.1968-1974
Hauptverfasser: Bielefeld, J., Pelz, G., Abel, H.B., Zimmer, G.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit simulation
Coupling circuits
Differential equations
Electrothermal effects
Electrothermal launching
MOSFET circuits
SPICE
Temperature
Thermal resistance
Vehicle dynamics
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Zusammenfassung:A nonlinear dynamic electrothermal model of the SOI MOSFET is implemented and used in SPICE3. This model is formulated as a set of algebraic and (partial) differential equations which is converted into a SPICE3 netlist automatically by a model translator. Neither is the simulator rewritten nor are SPICE device models implemented or changed. In this way, the presented approach supports effective model development. To show the electrothermal interaction, the SOI MOSFET model is applied to several static and dynamic simulations. The SPICE-simulation results of the thermal model are verified with the commercial finite-element simulator ANSYS.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.469405