1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiency

1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiency

High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has be...

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Veröffentlicht in:IEEE transactions on electron devices 1995-11, Vol.42 (11), p.1890-1896
Hauptverfasser: Shimura, T., Sakai, M., Izumi, S., Nakano, H., Matsuoka, H., Inoue, A., Udomoto, J., Kosaki, K., Kuragaki, T., Takano, H., Sonoda, T., Takamiya, S.
Format: Artikel
Sprache:eng
Schlagworte:
Doping
Electrodes
Electronic ballasts
Epitaxial layers
Gallium arsenide
Gold
Heat sinks
Heterojunction bipolar transistors
Power generation
Resistors
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Beschreibung
Zusammenfassung:High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 /spl mu/m/sup 2/. 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.469393