W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

Very low-noise 0.15- mu m gate-length W-band In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP lattice-matched HEMTs are discussed. A maximum extrinsic transconductance of 1300 mS/mm has been measured for the device. At 18 GHz, a noise figure of 0.3 dB with an associated gain of 17.2 dB was measured. The device also exhibited a minimum noise figure of 1.4 dB with 6.6-dB associated gain at 93 GHz. A maximum available gain of 12.6 dB at 95 GHz, corresponding to a maximum frequency of oscillation, f/sub max/, of 405 GHz (-6-dB/octave extrapolation) in the device was measured. These are the best device results yet reported. These results clearly demonstrate the potential of the InP-based HEMTs for low-noise applications, at least up to 100 GHz.< >