High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs

High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs

State-of-the-art, 60-GHz, low-noise MMICs based on pseudomorphic modulation-doped FETs, with 0.25- mu m*60- mu m gates offset 0.3 mu m from the source ohmic, are discussed. Single-state low-noise amplifiers (LNAs) exhibited minimum noise figures of 2.90 dB with 4.1 dB of associated gain at 59.25 GHz...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1990-01, Vol.11 (1), p.24-26
Hauptverfasser: Metze, G.M., Bass, J.F., Lee, T.T., Cornfeld, A.B., Singer, J.L., Hung, H.-L., Huang, H.C., Pande, K.P.
Format: Artikel
Sprache:eng
Schlagworte:
Gain
Gallium arsenide
HEMTs
Indium gallium arsenide
Low-noise amplifiers
MESFETs
Millimeter wave technology
MMICs
MODFET circuits
Noise figure
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:State-of-the-art, 60-GHz, low-noise MMICs based on pseudomorphic modulation-doped FETs, with 0.25- mu m*60- mu m gates offset 0.3 mu m from the source ohmic, are discussed. Single-state low-noise amplifiers (LNAs) exhibited minimum noise figures of 2.90 dB with 4.1 dB of associated gain at 59.25 GHz. Dual-state MMICs had minimum noise figures of 3.5 dB and 10.8 dB of associated gain at 58.50 GHz. Cascaded four-stage LNAs (two dual-stage MMICs) had minimum noise figures of 3.7 dB and over 20.7 dB of associated gain at 58.0 GHz. Finally, when biased for maximum gain, the four-stage amplifier exhibited over 30.4 dB of gain at 60.0 GHz.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.46919