Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs

A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the , and directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual 3DHG KG formula, but also using a 2DHG calculation. The latter, that accounts for quantum confinement due to the transverse field, is based on a fully self-consistent Poisson-kp-Schrodinger scheme. This 2DHG approach appears to be mandatory for an accurate description of transport properties in strained inversion layers.