Resonant tunneling diode based on nitride gallium nanostructural cathode

Microwave characteristics of a new type of a resonant tunneling diode (RTD) based on GaN nanostructural cathode with two-layer Al x Ga 1-x N-GaN coating are investigated theoretically in framework the model of vacuum RTD . Optimum parameters of cathode coating layers were found at which the upper fr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Goncharuk, N.M., Karushkin, N.F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Cathodes Diodes Gallium arsenide Gallium nitride Helium Hidden Markov models III-V semiconductor materials Resonant tunneling devices
Online-Zugang:	Volltext bestellen
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