Resonant tunneling diode based on nitride gallium nanostructural cathode

Resonant tunneling diode based on nitride gallium nanostructural cathode

Microwave characteristics of a new type of a resonant tunneling diode (RTD) based on GaN nanostructural cathode with two-layer Al x Ga 1-x N-GaN coating are investigated theoretically in framework the model of vacuum RTD . Optimum parameters of cathode coating layers were found at which the upper fr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Goncharuk, N.M., Karushkin, N.F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Cathodes
Diodes
Gallium arsenide
Gallium nitride
Helium
Hidden Markov models
III-V semiconductor materials
Resonant tunneling devices
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Beschreibung
Zusammenfassung:Microwave characteristics of a new type of a resonant tunneling diode (RTD) based on GaN nanostructural cathode with two-layer Al x Ga 1-x N-GaN coating are investigated theoretically in framework the model of vacuum RTD . Optimum parameters of cathode coating layers were found at which the upper frequency of diode negative conductance band is in sub-millimeter range of wave length.
DOI:10.1109/CRMICO.2008.4676530