A Novel High Voltage, Vertical MOSFET for High Power RF Applications

This paper describes a novel, high-voltage vertical FET (HWFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Golio, M., Davies, R., Gogoi, B., Lutz, D., Battaglia, B., Neeley, R., Wright, W., Rice, D., Phuong Le, Purchine, M., Elliot, A., Tran, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Dielectrics Gain MOSFET circuits Packaging Parasitic capacitance Power MOSFET Radio frequency Silicon Space technology Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!