A Novel High Voltage, Vertical MOSFET for High Power RF Applications

A Novel High Voltage, Vertical MOSFET for High Power RF Applications

This paper describes a novel, high-voltage vertical FET (HWFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both...

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Hauptverfasser: Golio, M., Davies, R., Gogoi, B., Lutz, D., Battaglia, B., Neeley, R., Wright, W., Rice, D., Phuong Le, Purchine, M., Elliot, A., Tran, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectrics
Gain
MOSFET circuits
Packaging
Parasitic capacitance
Power MOSFET
Radio frequency
Silicon
Space technology
Voltage
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Beschreibung
Zusammenfassung:This paper describes a novel, high-voltage vertical FET (HWFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both a 25 Watt and a 100 Watt embodiment of the structure exhibit over 20 dB of gain with >45% efficiency from 1.2 to 1.4 GHz in a package that is approximately 1/4 the size of competing device technologies. A 300 Watt version of the device exhibits >15.5 dB of gain with > 46% efficiency from 1.03 to 1.09 GHz.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2008.21