Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coef...

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Hauptverfasser: Ting-Chou Lu, Ming-Dou Ker, Hsiao-Wen Zan, Chung-Hung Kuo, Chun-Huai Li, Yao-Jen Hsieh, Chun-Ting Liu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
CMOS technology
Diodes
Glass
MOSFETs
Photonic band gap
Substrates
Temperature sensors
Thin film transistors
Voltage
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creator Ting-Chou Lu
Ming-Dou Ker
Hsiao-Wen Zan
Chung-Hung Kuo
Chun-Huai Li
Yao-Jen Hsieh
Chun-Ting Liu
description A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degC under the supply voltage of 10 V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.
doi_str_mv 10.1109/CICC.2008.4672188
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subjects Circuits
CMOS technology
Diodes
Glass
MOSFETs
Photonic band gap
Substrates
Temperature sensors
Thin film transistors
Voltage
title Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process
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