Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coef...

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Bibliographische Detailangaben
Hauptverfasser: Ting-Chou Lu, Ming-Dou Ker, Hsiao-Wen Zan, Chung-Hung Kuo, Chun-Huai Li, Yao-Jen Hsieh, Chun-Ting Liu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
CMOS technology
Diodes
Glass
MOSFETs
Photonic band gap
Substrates
Temperature sensors
Thin film transistors
Voltage
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Beschreibung
Zusammenfassung:A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degC under the supply voltage of 10 V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.
ISSN:0886-5930
2152-3630
DOI:10.1109/CICC.2008.4672188