625 nm wavelength vertical-external-cavity optical-pumped laser based on GaInP/AlGaInP nanostructure with DBR mirror

A pulse (5 ns) semiconductor laser based on a GaInP/AlGaInP multi quantum well (MQW) structure with an AlAs/AlGaAs distributed Bragg reflector (DBR) and an external mirror was realised under optical pumping by emission of a frequency-doubled Q-modulated diode-pumped Nd-YAG laser. Lasing occurred at...

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Bibliographische Detailangaben
Hauptverfasser:	Kozlovsky, V.I., Lavrushin, B.M., Skasyrsky, Ya.K., Tiberi, M.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Distributed Bragg reflectors Frequency GaInP/AlGaInP MQW structure Mirrors Optical pulses Optical pumping Pump lasers Quantum well devices Quantum well lasers Semiconductor lasers Stimulated emission VECSEL
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Beschreibung
Zusammenfassung:	A pulse (5 ns) semiconductor laser based on a GaInP/AlGaInP multi quantum well (MQW) structure with an AlAs/AlGaAs distributed Bragg reflector (DBR) and an external mirror was realised under optical pumping by emission of a frequency-doubled Q-modulated diode-pumped Nd-YAG laser. Lasing occurred at a wavelength of 625 nm in TEM 00 mode with a peak output power of 3.1 W at a repetition rate of 6 kHz.
ISSN:	2160-1518 2160-1534
DOI:	10.1109/CAOL.2008.4671907