Monolithically Integrated DFB-EA for 100 Gb/s Ethernet
The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected ges100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three act...
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| Veröffentlicht in: | IEEE electron device letters 2008-12, Vol.29 (12), p.1312-1314 |
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| container_end_page | 1314 |
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| container_issue | 12 |
| container_start_page | 1312 |
| container_title | IEEE electron device letters |
| container_volume | 29 |
| creator | Chacinski, M. Westergren, U. Stoltz, B. Thylen, L. |
| description | The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected ges100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mum resulting in ~ 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection. |
| doi_str_mv | 10.1109/LED.2008.2007222 |
| format | Article |
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The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mum resulting in ~ 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.</description><identifier>ISSN: 0741-3106</identifier><identifier>ISSN: 1558-0563</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2007222</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; Circuit properties ; Design. Technologies. Operation analysis. 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(IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-9175f607ebb5039de269e4c0128f39efc8654baa12cb763d32d068d61e013a2f3</citedby><cites>FETCH-LOGICAL-c421t-9175f607ebb5039de269e4c0128f39efc8654baa12cb763d32d068d61e013a2f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4667666$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4667666$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20911836$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-18076$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Chacinski, M.</creatorcontrib><creatorcontrib>Westergren, U.</creatorcontrib><creatorcontrib>Stoltz, B.</creatorcontrib><creatorcontrib>Thylen, L.</creatorcontrib><title>Monolithically Integrated DFB-EA for 100 Gb/s Ethernet</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected ges100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mum resulting in ~ 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Distributed feedback devices</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Ethernet networks</subject><subject>Exact sciences and technology</subject><subject>Extinction</subject><subject>Extinction ratio</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>High-speed modulator</subject><subject>Integrated circuits</subject><subject>integrated optoelectronics</subject><subject>Integrated optoelectronics. Optoelectronic circuits</subject><subject>Laser feedback</subject><subject>Lasers</subject><subject>Modulators</subject><subject>Noise levels</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical design</subject><subject>Optical feedback</subject><subject>Optical modulation</subject><subject>Optical reflection</subject><subject>Optics</subject><subject>Physics</subject><subject>Reflection</subject><subject>Segments</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>semiconductor lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Voltage</subject><subject>waveguide modulator</subject><issn>0741-3106</issn><issn>1558-0563</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kb1v20AMxQ9FC9R1uwfIIgRI0KFKyPvW6MROGsBFlzbr4SRRsRJF59zJKPLfV4INDx26kAN_fODjY-wE4RIRiqv1annJAexUDOf8HZuhUjYHpcV7NgMjMRcI-iP7lNITAEpp5IzpH6EPXTts2sp33Vt23w_0GP1Adba8vc5Xi6wJMUOA7K68Stlq2FDsafjMPjS-S_Tl0Ofs9-3q1833fP3z7v5msc4ryXHICzSq0WCoLBWIoiauC5IVILeNKKiprFay9B55VRotasFr0LbWSIDC80bM2be9bvpD213ptrF98fHNBd-6ZfuwcCE-uudh49DCKDBnF3t8G8PrjtLgXtpUUdf5nsIuOSEVWJA4gl__CyIgWKsMwoie_YM-hV3sR9euQM6NVcWkB3uoiiGlSM3xUgQ35ePGfNyUjzvkM66cH3R9Gn_fRN9XbTrucSgQrZg8ne65loiOY6m10VqLv2vtlD0</recordid><startdate>20081201</startdate><enddate>20081201</enddate><creator>Chacinski, M.</creator><creator>Westergren, U.</creator><creator>Stoltz, B.</creator><creator>Thylen, L.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>KR7</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8V</scope></search><sort><creationdate>20081201</creationdate><title>Monolithically Integrated DFB-EA for 100 Gb/s Ethernet</title><author>Chacinski, M. ; Westergren, U. ; Stoltz, B. ; Thylen, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c421t-9175f607ebb5039de269e4c0128f39efc8654baa12cb763d32d068d61e013a2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Circuit properties</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Distributed feedback devices</topic><topic>Electric potential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Ethernet networks</topic><topic>Exact sciences and technology</topic><topic>Extinction</topic><topic>Extinction ratio</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>High-speed modulator</topic><topic>Integrated circuits</topic><topic>integrated optoelectronics</topic><topic>Integrated optoelectronics. Optoelectronic circuits</topic><topic>Laser feedback</topic><topic>Lasers</topic><topic>Modulators</topic><topic>Noise levels</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical design</topic><topic>Optical feedback</topic><topic>Optical modulation</topic><topic>Optical reflection</topic><topic>Optics</topic><topic>Physics</topic><topic>Reflection</topic><topic>Segments</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>semiconductor lasers</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Voltage</topic><topic>waveguide modulator</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chacinski, M.</creatorcontrib><creatorcontrib>Westergren, U.</creatorcontrib><creatorcontrib>Stoltz, B.</creatorcontrib><creatorcontrib>Thylen, L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Kungliga Tekniska Högskolan</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chacinski, M.</au><au>Westergren, U.</au><au>Stoltz, B.</au><au>Thylen, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolithically Integrated DFB-EA for 100 Gb/s Ethernet</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-12-01</date><risdate>2008</risdate><volume>29</volume><issue>12</issue><spage>1312</spage><epage>1314</epage><pages>1312-1314</pages><issn>0741-3106</issn><issn>1558-0563</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected ges100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. 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| ispartof | IEEE electron device letters, 2008-12, Vol.29 (12), p.1312-1314 |
| issn | 0741-3106 1558-0563 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bandwidth Circuit properties Design. Technologies. Operation analysis. Testing Devices Distributed feedback devices Electric potential Electric, optical and optoelectronic circuits Electronics Ethernet networks Exact sciences and technology Extinction Extinction ratio Fundamental areas of phenomenology (including applications) High-speed modulator Integrated circuits integrated optoelectronics Integrated optoelectronics. Optoelectronic circuits Laser feedback Lasers Modulators Noise levels Optical and optoelectronic circuits Optical design Optical feedback Optical modulation Optical reflection Optics Physics Reflection Segments Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices semiconductor lasers Semiconductor lasers laser diodes Voltage waveguide modulator |
| title | Monolithically Integrated DFB-EA for 100 Gb/s Ethernet |
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