Monolithically Integrated DFB-EA for 100 Gb/s Ethernet

The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected ges100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three act...

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Veröffentlicht in:	IEEE electron device letters 2008-12, Vol.29 (12), p.1312-1314
Hauptverfasser:	Chacinski, M., Westergren, U., Stoltz, B., Thylen, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth Circuit properties Design. Technologies. Operation analysis. Testing Devices Distributed feedback devices Electric potential Electric, optical and optoelectronic circuits Electronics Ethernet networks Exact sciences and technology Extinction Extinction ratio Fundamental areas of phenomenology (including applications) High-speed modulator Integrated circuits integrated optoelectronics Integrated optoelectronics. Optoelectronic circuits Laser feedback Lasers Modulators Noise levels Optical and optoelectronic circuits Optical design Optical feedback Optical modulation Optical reflection Optics Physics Reflection Segments Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices semiconductor lasers Semiconductor lasers laser diodes Voltage waveguide modulator
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Beschreibung
Zusammenfassung:	The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected ges100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mum resulting in ~ 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.
ISSN:	0741-3106 1558-0563 1558-0563
DOI:	10.1109/LED.2008.2007222