Optical silicon modulator and photonic integration

In this paper, we review recent results of high-speed silicon photonic modulators based on electrical-field-induced carrier depletion effect in a silicon-on-insulator waveguide. We also present detailed design, fabrication, and characterization of a photonic integrated circuit on a silicon platform....

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Hauptverfasser: Ansheng Liu, Ling Liao, Basak, J., Nguyen, H., Paniccia, M., Chetrit, Y., Rubin, D.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In this paper, we review recent results of high-speed silicon photonic modulators based on electrical-field-induced carrier depletion effect in a silicon-on-insulator waveguide. We also present detailed design, fabrication, and characterization of a photonic integrated circuit on a silicon platform. We demonstrate an aggregate data transmission rate of 200 Gb/s with 8 channels wavelength division multiplexing on a single silicon chip.
DOI:10.1109/MWP.2008.4666695