Low cost, highly flexible complementary bipolar transistors compatible with 0.18 or 0.13μm CMOS technology

Both NPN and PNP bipolar transistors are modularly integrated at low cost into standard 0.18 mum and 0.13 mum CMOS process flows. The bipolar modules are of low complexity and thus cost, using only 4 dedicated masks for the NPN and only 2 for the PNP devices. The resulting devices cover an extremely wide range of application space. Devices range from around 2 V BV CEO and 115 GHz F T to 12 V BV CEO and 12 GHz F T . Multiple device types can be co-integrated with the addition of simple implant masking steps.