Charge carrier transport in SiC Schottky interfaces: Shape factor approach

Charge carrier transport in SiC Schottky interfaces: Shape factor approach

Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kurel, R., Rang, T., Rang, G., Kasemaa, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carriers
Current-voltage characteristics
Equations
Impurities
Mathematical model
Shape
Temperature
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Beschreibung
Zusammenfassung:Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is discussed. Unified handling methodology has been demonstrated.
ISSN:1736-3705
DOI:10.1109/BEC.2008.4657484