Twin silicon nanowire FET (TSNWFET) On SOI with 8 nm silicon nanowires and 25 nm surrounding TiN gate

In this work, fabrication of TSNWFET on SOI with down to 25-nm TiN surrounding gate and 8-nm silicon nanowires is reported with high manufacturability and improved device reliability including reduced junction and gate leakage currents by fully eliminating the bottom parasitic channel existing in pr...

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Hauptverfasser: Dong-Won Kim, Ming Li, Kyoung Hwan Yeo, Yun Young Yeoh, Sung Dae Suk, Keun Hwi Cho, Kyungseok Oh, Won-Seong Lee
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In this work, fabrication of TSNWFET on SOI with down to 25-nm TiN surrounding gate and 8-nm silicon nanowires is reported with high manufacturability and improved device reliability including reduced junction and gate leakage currents by fully eliminating the bottom parasitic channel existing in previous TSNWFET on bulk Si. And high performance is also obtained to be 1124muA/mum and 1468muA/mum at off current of 1nA/mum for NMOS and PMOS, respectively.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2008.4656322