Strain Enhanced nMOS Using In Situ Doped Embedded \hbox\hbox S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process

This letter reports on the implementation of high carbon content and high phosphorous content Si 1-x C x layers in the source and drain regions of n-type MOSFET in a 65-nm-node integration scheme. The layers were grown using a novel epitaxial process. It is shown that by implementing stressors with x ap 0.01, nMOSFET device performance is enhanced by up to 10%, driving 880 muA/mum at 1-V V DD . It is also demonstrated that the successful implementation of Si 1-x C x relies on the careful choice of integration and epitaxial layer parameters. There is a clear impact of the postepitaxial implantation and thermal treatment on the retained substitutional C content ([ C sub ]). Furthermore, adding a Si capping layer on top of the Si 1 -x C x , greatly improves upon the stressors' stability during the downstream processing and the silicide sheet resistance.