Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications

A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techniques and were fabricated into p-n heteroface sola...

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Veröffentlicht in:	IEEE transactions on electron devices 1990-02, Vol.37 (2), p.469-477
Hauptverfasser:	Tobin, S.P., Vernon, S.M., Bajgar, C., Wojtczuk, S., Melloch, M.R., Keshavarzi, A., Stellwag, T.B., Venkatensan, S., Lundstrom, M., Emery, K.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Crystalline materials Furnaces Gallium arsenide MOCVD Molecular beam epitaxial growth Photovoltaic cells Photovoltaic systems Solar energy Solar power generation
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