Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications
A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techniques and were fabricated into p-n heteroface sola...
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| Veröffentlicht in: | IEEE transactions on electron devices 1990-02, Vol.37 (2), p.469-477 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 37 |
| creator | Tobin, S.P. Vernon, S.M. Bajgar, C. Wojtczuk, S. Melloch, M.R. Keshavarzi, A. Stellwag, T.B. Venkatensan, S. Lundstrom, M. Emery, K.A. |
| description | A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techniques and were fabricated into p-n heteroface solar cells. The 0.5-cm by 0.5-cm cells were then characterized and compared. The MOCVD-grown films produced independently verified record efficiency cells of 24.8% under 1-sun AM1.5 global conditions while the MB-grown films produced similarly high efficiencies of 23.8%. The material qualities of the two films in terms of minority-carrier diffusion lengths and surface recombination velocities were quite comparable. These results demonstrate that the quality of MBE-grown films can be quite comparable to the best MOCVD-grown films and that they are suitable for high-efficiency solar cells.< > |
| doi_str_mv | 10.1109/16.46385 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_46385</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>46385</ieee_id><sourcerecordid>28658401</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1871-fb43f0929dd40081e738649ce4859ab4aa1c8fed1e29457c4a2f3281cdefabfc3</originalsourceid><addsrcrecordid>eNo90MFLwzAUBvAgCs4pePWWk3jJTJo0TY5zzils7DK9lix92SJdU5MO2X_vZsXT4_F-fDw-hG4ZHTFG9SOTIyG5ys_QgOV5QbQU8hwNKGWKaK74JbpK6fO4SiGyAVqNU4KUdtB0ODi8WE4-ngk2TYUXT1OyieG72-KZGSfsQsRbv9kScM5bD4094BRqE7GFusambWtvTedDk67RhTN1gpu_OUTvL9PV5JXMl7O3yXhOLFMFI24tuKM601UlKFUMCq6k0BaEyrVZC2OYVQ4qBpkWeWGFyRzPFLMVOLN2lg_RfZ_bxvC1h9SVO59O35gGwj6VmZK5EpQd4UMPbQwpRXBlG_3OxEPJaHmqrWSy_K3tSO966gHgn_W3H7B0Zs4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28658401</pqid></control><display><type>article</type><title>Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications</title><source>IEEE Electronic Library (IEL)</source><creator>Tobin, S.P. ; Vernon, S.M. ; Bajgar, C. ; Wojtczuk, S. ; Melloch, M.R. ; Keshavarzi, A. ; Stellwag, T.B. ; Venkatensan, S. ; Lundstrom, M. ; Emery, K.A.</creator><creatorcontrib>Tobin, S.P. ; Vernon, S.M. ; Bajgar, C. ; Wojtczuk, S. ; Melloch, M.R. ; Keshavarzi, A. ; Stellwag, T.B. ; Venkatensan, S. ; Lundstrom, M. ; Emery, K.A.</creatorcontrib><description>A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techniques and were fabricated into p-n heteroface solar cells. The 0.5-cm by 0.5-cm cells were then characterized and compared. The MOCVD-grown films produced independently verified record efficiency cells of 24.8% under 1-sun AM1.5 global conditions while the MB-grown films produced similarly high efficiencies of 23.8%. The material qualities of the two films in terms of minority-carrier diffusion lengths and surface recombination velocities were quite comparable. These results demonstrate that the quality of MBE-grown films can be quite comparable to the best MOCVD-grown films and that they are suitable for high-efficiency solar cells.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.46385</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical vapor deposition ; Crystalline materials ; Furnaces ; Gallium arsenide ; MOCVD ; Molecular beam epitaxial growth ; Photovoltaic cells ; Photovoltaic systems ; Solar energy ; Solar power generation</subject><ispartof>IEEE transactions on electron devices, 1990-02, Vol.37 (2), p.469-477</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1871-fb43f0929dd40081e738649ce4859ab4aa1c8fed1e29457c4a2f3281cdefabfc3</citedby><cites>FETCH-LOGICAL-c1871-fb43f0929dd40081e738649ce4859ab4aa1c8fed1e29457c4a2f3281cdefabfc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/46385$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/46385$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tobin, S.P.</creatorcontrib><creatorcontrib>Vernon, S.M.</creatorcontrib><creatorcontrib>Bajgar, C.</creatorcontrib><creatorcontrib>Wojtczuk, S.</creatorcontrib><creatorcontrib>Melloch, M.R.</creatorcontrib><creatorcontrib>Keshavarzi, A.</creatorcontrib><creatorcontrib>Stellwag, T.B.</creatorcontrib><creatorcontrib>Venkatensan, S.</creatorcontrib><creatorcontrib>Lundstrom, M.</creatorcontrib><creatorcontrib>Emery, K.A.</creatorcontrib><title>Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techniques and were fabricated into p-n heteroface solar cells. The 0.5-cm by 0.5-cm cells were then characterized and compared. The MOCVD-grown films produced independently verified record efficiency cells of 24.8% under 1-sun AM1.5 global conditions while the MB-grown films produced similarly high efficiencies of 23.8%. The material qualities of the two films in terms of minority-carrier diffusion lengths and surface recombination velocities were quite comparable. These results demonstrate that the quality of MBE-grown films can be quite comparable to the best MOCVD-grown films and that they are suitable for high-efficiency solar cells.< ></description><subject>Chemical vapor deposition</subject><subject>Crystalline materials</subject><subject>Furnaces</subject><subject>Gallium arsenide</subject><subject>MOCVD</subject><subject>Molecular beam epitaxial growth</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic systems</subject><subject>Solar energy</subject><subject>Solar power generation</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNo90MFLwzAUBvAgCs4pePWWk3jJTJo0TY5zzils7DK9lix92SJdU5MO2X_vZsXT4_F-fDw-hG4ZHTFG9SOTIyG5ys_QgOV5QbQU8hwNKGWKaK74JbpK6fO4SiGyAVqNU4KUdtB0ODi8WE4-ngk2TYUXT1OyieG72-KZGSfsQsRbv9kScM5bD4094BRqE7GFusambWtvTedDk67RhTN1gpu_OUTvL9PV5JXMl7O3yXhOLFMFI24tuKM601UlKFUMCq6k0BaEyrVZC2OYVQ4qBpkWeWGFyRzPFLMVOLN2lg_RfZ_bxvC1h9SVO59O35gGwj6VmZK5EpQd4UMPbQwpRXBlG_3OxEPJaHmqrWSy_K3tSO966gHgn_W3H7B0Zs4</recordid><startdate>19900201</startdate><enddate>19900201</enddate><creator>Tobin, S.P.</creator><creator>Vernon, S.M.</creator><creator>Bajgar, C.</creator><creator>Wojtczuk, S.</creator><creator>Melloch, M.R.</creator><creator>Keshavarzi, A.</creator><creator>Stellwag, T.B.</creator><creator>Venkatensan, S.</creator><creator>Lundstrom, M.</creator><creator>Emery, K.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19900201</creationdate><title>Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications</title><author>Tobin, S.P. ; Vernon, S.M. ; Bajgar, C. ; Wojtczuk, S. ; Melloch, M.R. ; Keshavarzi, A. ; Stellwag, T.B. ; Venkatensan, S. ; Lundstrom, M. ; Emery, K.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1871-fb43f0929dd40081e738649ce4859ab4aa1c8fed1e29457c4a2f3281cdefabfc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Chemical vapor deposition</topic><topic>Crystalline materials</topic><topic>Furnaces</topic><topic>Gallium arsenide</topic><topic>MOCVD</topic><topic>Molecular beam epitaxial growth</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic systems</topic><topic>Solar energy</topic><topic>Solar power generation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tobin, S.P.</creatorcontrib><creatorcontrib>Vernon, S.M.</creatorcontrib><creatorcontrib>Bajgar, C.</creatorcontrib><creatorcontrib>Wojtczuk, S.</creatorcontrib><creatorcontrib>Melloch, M.R.</creatorcontrib><creatorcontrib>Keshavarzi, A.</creatorcontrib><creatorcontrib>Stellwag, T.B.</creatorcontrib><creatorcontrib>Venkatensan, S.</creatorcontrib><creatorcontrib>Lundstrom, M.</creatorcontrib><creatorcontrib>Emery, K.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tobin, S.P.</au><au>Vernon, S.M.</au><au>Bajgar, C.</au><au>Wojtczuk, S.</au><au>Melloch, M.R.</au><au>Keshavarzi, A.</au><au>Stellwag, T.B.</au><au>Venkatensan, S.</au><au>Lundstrom, M.</au><au>Emery, K.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1990-02-01</date><risdate>1990</risdate><volume>37</volume><issue>2</issue><spage>469</spage><epage>477</epage><pages>469-477</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techniques and were fabricated into p-n heteroface solar cells. The 0.5-cm by 0.5-cm cells were then characterized and compared. The MOCVD-grown films produced independently verified record efficiency cells of 24.8% under 1-sun AM1.5 global conditions while the MB-grown films produced similarly high efficiencies of 23.8%. The material qualities of the two films in terms of minority-carrier diffusion lengths and surface recombination velocities were quite comparable. These results demonstrate that the quality of MBE-grown films can be quite comparable to the best MOCVD-grown films and that they are suitable for high-efficiency solar cells.< ></abstract><pub>IEEE</pub><doi>10.1109/16.46385</doi><tpages>9</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1990-02, Vol.37 (2), p.469-477 |
| issn | 0018-9383 1557-9646 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Chemical vapor deposition Crystalline materials Furnaces Gallium arsenide MOCVD Molecular beam epitaxial growth Photovoltaic cells Photovoltaic systems Solar energy Solar power generation |
| title | Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T12%3A16%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Assessment%20of%20MOCVD-%20and%20MBE-growth%20GaAs%20for%20high-efficiency%20solar%20cell%20applications&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Tobin,%20S.P.&rft.date=1990-02-01&rft.volume=37&rft.issue=2&rft.spage=469&rft.epage=477&rft.pages=469-477&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.46385&rft_dat=%3Cproquest_RIE%3E28658401%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28658401&rft_id=info:pmid/&rft_ieee_id=46385&rfr_iscdi=true |