The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.

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Bibliographische Detailangaben
Hauptverfasser: Kuindersma, P.I., Hoang, T., Schmitz, J., Vijayaraghavan, M.N., Dijkstra, M., van Noort, W., Vanhoucke, T., Peters, W.C.M., Kramer, M.C.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Optical imaging
Optical receivers
Optical sensors
Optical variables measurement
Power conversion
Silicon
Stimulated emission
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Beschreibung
Zusammenfassung:We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2008.4638164