Relaxation of upper laser levels in terahertz silicon lasers

Relaxation of upper laser levels in terahertz silicon lasers

Relaxation of lower exited states of group-V donors in silicon which serve as upper working states of intracenter silicon lasers has been experimentally determined. The measurements show that decay times of 2p 0 and 2p plusmn states lie in the range of 4-90 ps.

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Bibliographische Detailangaben
Hauptverfasser: Pavlov, S.G., Hubers, H.-W., Zhukavin, R.Kh, Phillips, P.J., Carder, D.A., Hovenier, J.N., Klaassen, T.O., Shastin, V.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Free electron lasers
Laser excitation
Measurement by laser beam
Probes
Pump lasers
Quantum cascade lasers
Silicon
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Beschreibung
Zusammenfassung:Relaxation of lower exited states of group-V donors in silicon which serve as upper working states of intracenter silicon lasers has been experimentally determined. The measurements show that decay times of 2p 0 and 2p plusmn states lie in the range of 4-90 ps.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2008.4638085