High-efficiency GaN-based laser diodes for solid-state lighting

GaN-based laser diodes (LDs) with a slope efficiency of 2.6 W/A are presented. The white light source was fabricated by using 405 nm LDs and phosphors. The luminous flux was estimated to be 200 lm.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Saito, S., Hattori, Y., Sugai, M., Harada, Y., Jongil, H., Nunoue, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium nitride Light sources Lighting Measurement by laser beam Optical device fabrication Semiconductor lasers
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	GaN-based laser diodes (LDs) with a slope efficiency of 2.6 W/A are presented. The white light source was fabricated by using 405 nm LDs and phosphors. The luminous flux was estimated to be 200 lm.
ISSN:	0899-9406 1947-6981
DOI:	10.1109/ISLC.2008.4636071