Self-assembled GaInNAs quantum dot by MOCVD

Self-assembled GaInNAs quantum dot by MOCVD

MOCVD grown self-assembled quantum dot using dilute nitrogen material system (GaInNAs) is presented for GaAs-based long wavelength VCSELs. Suppression of Coalescence and inhomogeneous broadening by incorporating nitrogen into dot structure is particularly discussed.

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Bibliographische Detailangaben
Hauptverfasser: Suzuki, R., Sengoku, T., Nemoto, K., Tanabe, S., Miyamoto, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Awards activities
Buffer layers
Gallium arsenide
Gallium nitride
Materials
MOCVD
Vertical cavity surface emitting lasers
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Beschreibung
Zusammenfassung:MOCVD grown self-assembled quantum dot using dilute nitrogen material system (GaInNAs) is presented for GaAs-based long wavelength VCSELs. Suppression of Coalescence and inhomogeneous broadening by incorporating nitrogen into dot structure is particularly discussed.
DOI:10.1109/INOW.2008.4634489