A 65-W high-efficiency UHF GaN power amplifier

A 65-W high-efficiency UHF GaN power amplifier

This paper presents a high-efficiency UHF power amplifier (PA) using a GaN HEMT on a SiC substrate transistor as the active device. The PA delivers 65W with 82% power added efficiency (PAE), and 45W with 84% PAE at 370MHz, with supply voltages of 35V and 28 V, respectively. Load pull techniques unde...

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Hauptverfasser: Lopez, Nestor D., Hoversten, John, Poulton, Matthew, Popovic, Zoya
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Class-E
Gallium nitride
GaN HEMT
HEMTs
High-Efficiency
Impedance
Microwave amplifiers
Power amplifiers
Power generation
Transistors
UHF
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Zusammenfassung:This paper presents a high-efficiency UHF power amplifier (PA) using a GaN HEMT on a SiC substrate transistor as the active device. The PA delivers 65W with 82% power added efficiency (PAE), and 45W with 84% PAE at 370MHz, with supply voltages of 35V and 28 V, respectively. Load pull techniques under Class-E conditions are used for device characterization and matching network design. The PA is implemented in a hybrid circuit with mixed lumped-element and transmission-line matching networks. A weighted Euclidean distance is defined to enable tradeoff studies between output power (P OUT ) and efficiency, in order to find the final optimal amplifier design.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2008.4633104