Design of Low High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure

GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V V pi a...

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Veröffentlicht in:	IEEE photonics technology letters 2008-11, Vol.20 (21), p.1805-1807
Hauptverfasser:	Qiaoyin Lu, Weihua Guo, Byrne, D., Donegan, J.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	2-D finite-difference time-domain (FDTD) method Bandwidth Chirp modulation Coplanar waveguides Electrodes Electrooptic modulator Finite difference methods Gallium arsenide High speed optical techniques Optical modulation Optical waveguides PadÉ approximation transform Time domain analysis traveling-wave (TW) electrodes
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Zusammenfassung:	GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V V pi are predicted for a 5-mm-long modulator.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2008.2005009