Effects of Intermixing on Gain and Alpha Factors of Quantum-Dash Lasers

Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser q...

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Veröffentlicht in:IEEE photonics technology letters 2008-10, Vol.20 (19), p.1654-1656
Hauptverfasser: Chen, C., Wang, Y., Tan, C.L., Djie, H.S., Ooi, B.S., Hwang, J., Dang, G.T., Chang, W.H.
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Sprache:eng
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Zusammenfassung:Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser quality. In comparison, the laser intermixed by the ion-implantation technique has a larger shift but lower differential gain and higher alpha factor. The result implies that quantum-dash lasers of different wavelengths can be effectively integrated on the same chip by the dielectric-capping intermixing technique.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.2002747