Integrated silicon p-i-n-structures for modulation in terahertz range with highly doped P++, N++ regions
Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of the Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p ++ , n ++ regions, where both forbidden gap narrowing and de...
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| creator | Grimalsky, V. Koshevaya, S. Chillon, D.E. Escobedo, J.A. |
| description | Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of the Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p ++ , n ++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping are taken into account. The problem of double injection into r-region has been simulated in a two-dimensional case. The investigations of modulation properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap 8 THz. |
| doi_str_mv | 10.1109/ICMEL.2008.4559274 |
| format | Conference Proceeding |
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The generalization of the Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p ++ , n ++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping are taken into account. The problem of double injection into r-region has been simulated in a two-dimensional case. The investigations of modulation properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap 8 THz.</description><subject>Boundary conditions</subject><subject>Doping</subject><subject>Electrodes</subject><subject>Equations</subject><subject>Frequency</subject><subject>Microelectronics</subject><subject>Millimeter wave technology</subject><subject>Optical surface waves</subject><subject>Oscillators</subject><subject>Silicon</subject><isbn>9781424418817</isbn><isbn>142441881X</isbn><isbn>9781424418824</isbn><isbn>1424418828</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUF1LwzAUjchAnfsD-pL32pmkt03yKGPqYH486PPIkts20rUjyZD56y24Fy8cDofz8XAJueFszjnT96vFy3I9F4ypOZSlFhLOyExLxUEAcKUEnP_TXE7I1RiXmqlKFBdkFuMXGw_KQgO7JO2qT9gEk9DR6Dtvh57uc5_3eUzhYNMhYKT1EOhucIfOJD_6vqcJg2kxpB8aTN8g_fappa1v2u5I3bAfx96z7I6-ZhkN2IyleE0mtekizk48JZ-Py4_Fc75-e1otHta557JMudJCidoqVdQATkm-rZxzYJXYGgvSmspWCl1VgbEWLTplGZZOC1eP4FBMye3frkfEzT74nQnHzelZxS9EEFx6</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Grimalsky, V.</creator><creator>Koshevaya, S.</creator><creator>Chillon, D.E.</creator><creator>Escobedo, J.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200805</creationdate><title>Integrated silicon p-i-n-structures for modulation in terahertz range with highly doped P++, N++ regions</title><author>Grimalsky, V. ; Koshevaya, S. ; Chillon, D.E. ; Escobedo, J.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-89282fc883f44d871b6ddd4c82bac47ca6c68ed664acceced8c0e5d92df92d143</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Boundary conditions</topic><topic>Doping</topic><topic>Electrodes</topic><topic>Equations</topic><topic>Frequency</topic><topic>Microelectronics</topic><topic>Millimeter wave technology</topic><topic>Optical surface waves</topic><topic>Oscillators</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Grimalsky, V.</creatorcontrib><creatorcontrib>Koshevaya, S.</creatorcontrib><creatorcontrib>Chillon, D.E.</creatorcontrib><creatorcontrib>Escobedo, J.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grimalsky, V.</au><au>Koshevaya, S.</au><au>Chillon, D.E.</au><au>Escobedo, J.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integrated silicon p-i-n-structures for modulation in terahertz range with highly doped P++, N++ regions</atitle><btitle>2008 26th International Conference on Microelectronics</btitle><stitle>ICMEL</stitle><date>2008-05</date><risdate>2008</risdate><spage>263</spage><epage>266</epage><pages>263-266</pages><isbn>9781424418817</isbn><isbn>142441881X</isbn><eisbn>9781424418824</eisbn><eisbn>1424418828</eisbn><abstract>Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of the Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p ++ , n ++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping are taken into account. The problem of double injection into r-region has been simulated in a two-dimensional case. The investigations of modulation properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap 8 THz.</abstract><pub>IEEE</pub><doi>10.1109/ICMEL.2008.4559274</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boundary conditions Doping Electrodes Equations Frequency Microelectronics Millimeter wave technology Optical surface waves Oscillators Silicon |
| title | Integrated silicon p-i-n-structures for modulation in terahertz range with highly doped P++, N++ regions |
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