Integrated silicon p-i-n-structures for modulation in terahertz range with highly doped P++, N++ regions

Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of the Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p ++ , n ++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping are taken into account. The problem of double injection into r-region has been simulated in a two-dimensional case. The investigations of modulation properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap 8 THz.