Mitigation techniques for single event induced charge sharing in a 90 nm bulk CMOS process

Mitigation techniques to reduce the increased SEU cross-section associated with charge sharing in a 90 nm DICE latch are proposed. The increased error cross-section is caused by heavy ion angular strikes depending on the directionality of the ion vector, thereby exacerbating charge sharing among multiple circuit nodes. The use of nodal separation as a mitigation technique shows an order of magnitude decrease on upset cross-section compared to a conventional layout and the use of guard-rings show no noticeable effect on upset cross-section.