Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications

Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications

We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in I dss , the 60% confidence interval on estimate of E a was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of M...

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Hauptverfasser: Sangmin Lee, Vetury, R., Brown, J.D., Gibb, S.R., Cai, W.Z., Jinming Sun, Green, D.S., Shealy, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Gallium nitride
HEMTs
High power amplifiers
Life estimation
Radio frequency
Silicon carbide
Stress
Temperature
Testing
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Zusammenfassung:We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in I dss , the 60% confidence interval on estimate of E a was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of MTTF at Tj=200 degC was [1.0 x 10 6 , 3.0 x 10 7 ] hours. To compare the impact of dc and RF stress, additional experiments were conducted on a smaller sample set and the results indicate that the impact of dc and RF stress is not significantly different.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2008.4558926