High aspect ratio TSV copper filling with different seed layers

High aspect ratio TSV copper filling with different seed layers

The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the spherolyte Cu200 the electrolyte for the copper e...

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Hauptverfasser: Wolf, M.J., Dretschkow, T., Wunderle, B., Jurgensen, N., Engelmann, G., Ehrmann, O., Uhlig, A., Michel, B., Reichl, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Copper
Etching
Filling
Passivation
Polymer films
Resists
Silicon
Sputtering
Substrates
Through-silicon vias
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Zusammenfassung:The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the spherolyte Cu200 the electrolyte for the copper electrochemical deposition was modified for good filling behavior. Thermomechanical modeling and simulation was performed for reliability assessment.
ISSN:0569-5503
2377-5726
DOI:10.1109/ECTC.2008.4550029