Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers

Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers

We have studied the performance of double-quantum-barrier [TaN-Ir 3 Si]-[HfAlO-LaAlO 3 ]-Hf 0.3 N 0.2 O 0.5 -[HfAlO-SiO 2 ]-Si charge-trapping memory devices. These devices display good characteristics in terms of their plusmn9-V program/erase (P/E) voltage, 100-mus P/E speed, initial 3.2-V memory w...

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Veröffentlicht in:IEEE transactions on electron devices 2008-07, Vol.55 (7), p.1708-1713
Hauptverfasser: Lin, S.H., Yang, H.J., Chen, W.B., Yeh, F.S., McAlister, S.P., Chin, A.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Data storage
Decay rate
Design. Technologies. Operation analysis. Testing
Devices
Electric potential
Electronics
Endurance
Erase
Exact sciences and technology
Extrapolation
high- kappa
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Memory devices
nonvolatile memory
program
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Voltage
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Zusammenfassung:We have studied the performance of double-quantum-barrier [TaN-Ir 3 Si]-[HfAlO-LaAlO 3 ]-Hf 0.3 N 0.2 O 0.5 -[HfAlO-SiO 2 ]-Si charge-trapping memory devices. These devices display good characteristics in terms of their plusmn9-V program/erase (P/E) voltage, 100-mus P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 degC. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced interface trap generation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.924435