The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS

The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS

The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of V MS from 0.5V to 2.9V. The pulse width m...

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Bibliographische Detailangaben
Hauptverfasser: Woo Kwan Lee, Won Ho Choi, Young Jae Min, Hoon Ki Kim, Soo-Won Kim
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitors
CMOS technology
Driver circuits
Insulated gate bipolar transistors
Intensity modulation
Optical modulation
Photodiodes
Protection
Pulse width modulation
Space vector pulse width modulation
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Beschreibung
Zusammenfassung:The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of V MS from 0.5V to 2.9V. The pulse width modulator fabricated in 0.35-μm CMOS technology occupies 0.85mm x 0.56mm. This circuit consumes 1.2mA at 300Hz and 3.0V.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2008.4541770