Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface...

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Hauptverfasser: Civale, Y., Lorito, G., Cuiqin Xu, Nanver, L.K., van der Toorn, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atherosclerosis
Doping
Etching
Germanium silicon alloys
Heterojunction bipolar transistors
Medical simulation
Medical tests
Silicon germanium
Substrates
Temperature
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Zusammenfassung:The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity nu at the Al-metal to SPE-Si interface and the minority carrier lifetime tau have been determined to be in the ranges of 7times10 5 -1.2times10 6 cm/s and 2-3times10 -8 s, respectively.
DOI:10.1109/IWJT.2008.4540026