Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode
A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage V F up to 2.5 V (66 A/cm 2 ) and a V F rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Q rr and consequently rever...
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| creator | Bauer, J.G. Duetemeyer, T. Hille, F. Humbel, O. |
| description | A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage V F up to 2.5 V (66 A/cm 2 ) and a V F rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Q rr and consequently reverse recovery energy E rec of more than 35% have been achieved in comparison with a state of the art 6.5 kV emitter controlled diode. |
| doi_str_mv | 10.1109/ISPSD.2008.4538892 |
| format | Conference Proceeding |
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A reduction of the recovery charge Q rr and consequently reverse recovery energy E rec of more than 35% have been achieved in comparison with a state of the art 6.5 kV emitter controlled diode.</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9781424415328</identifier><identifier>ISBN: 1424415322</identifier><identifier>EISSN: 1946-0201</identifier><identifier>EISBN: 9781424415335</identifier><identifier>EISBN: 1424415330</identifier><identifier>DOI: 10.1109/ISPSD.2008.4538892</identifier><identifier>LCCN: 2007905108</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Computational fluid dynamics ; Plasma measurements ; Plasma temperature ; Power semiconductor devices ; Semiconductor device measurement ; Semiconductor diodes ; Switching loss ; Temperature control ; Voltage control</subject><ispartof>2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.40-43</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4538892$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4538892$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bauer, J.G.</creatorcontrib><creatorcontrib>Duetemeyer, T.</creatorcontrib><creatorcontrib>Hille, F.</creatorcontrib><creatorcontrib>Humbel, O.</creatorcontrib><title>Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode</title><title>2008 20th International Symposium on Power Semiconductor Devices and IC's</title><addtitle>ISPSD</addtitle><description>A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. 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A reduction of the recovery charge Q rr and consequently reverse recovery energy E rec of more than 35% have been achieved in comparison with a state of the art 6.5 kV emitter controlled diode.</description><subject>Anodes</subject><subject>Computational fluid dynamics</subject><subject>Plasma measurements</subject><subject>Plasma temperature</subject><subject>Power semiconductor devices</subject><subject>Semiconductor device measurement</subject><subject>Semiconductor diodes</subject><subject>Switching loss</subject><subject>Temperature control</subject><subject>Voltage control</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781424415328</isbn><isbn>1424415322</isbn><isbn>9781424415335</isbn><isbn>1424415330</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtOwzAURM2jEqXkB2DjH0iwr9_LKm2hUlGRAmyrm9qGQEiqNAj690SiG2Yzi5GOZoaQa84yzpm7XRaPxSwDxmwmlbDWwQlJnLFcgpRcCaFOyZg7qVMGjJ_9y8CeDxnTItVWyRG5HDDGMcWZvSDJfv_OBg1UIdmYTOc_u9BVn6HpsaZF_-UPtI0Uqc7Uxwt9WBc0b5u-a-sayzrQRRfC91sIddW80lnV-nBFRhHrfUiOPiHPi_lTfp-u1nfLfLpKK25Un4IBjAogCI9lBO5Kr9Wwr3TIjYPoNRqMMWqjS4kR1RY5bDUwDd5bq8SE3PxxqxDCZjd0xu6wOb4jfgFKhlCv</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Bauer, J.G.</creator><creator>Duetemeyer, T.</creator><creator>Hille, F.</creator><creator>Humbel, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200805</creationdate><title>Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode</title><author>Bauer, J.G. ; Duetemeyer, T. ; Hille, F. ; Humbel, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-272af522e3dabf219bd65008b9a1792fd6a7afff676b4afa5ca12c62062dd8853</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Anodes</topic><topic>Computational fluid dynamics</topic><topic>Plasma measurements</topic><topic>Plasma temperature</topic><topic>Power semiconductor devices</topic><topic>Semiconductor device measurement</topic><topic>Semiconductor diodes</topic><topic>Switching loss</topic><topic>Temperature control</topic><topic>Voltage control</topic><toplevel>online_resources</toplevel><creatorcontrib>Bauer, J.G.</creatorcontrib><creatorcontrib>Duetemeyer, T.</creatorcontrib><creatorcontrib>Hille, F.</creatorcontrib><creatorcontrib>Humbel, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bauer, J.G.</au><au>Duetemeyer, T.</au><au>Hille, F.</au><au>Humbel, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode</atitle><btitle>2008 20th International Symposium on Power Semiconductor Devices and IC's</btitle><stitle>ISPSD</stitle><date>2008-05</date><risdate>2008</risdate><spage>40</spage><epage>43</epage><pages>40-43</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781424415328</isbn><isbn>1424415322</isbn><eisbn>9781424415335</eisbn><eisbn>1424415330</eisbn><abstract>A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage V F up to 2.5 V (66 A/cm 2 ) and a V F rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Q rr and consequently reverse recovery energy E rec of more than 35% have been achieved in comparison with a state of the art 6.5 kV emitter controlled diode.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2008.4538892</doi><tpages>4</tpages></addata></record> |
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| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_4538892 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anodes Computational fluid dynamics Plasma measurements Plasma temperature Power semiconductor devices Semiconductor device measurement Semiconductor diodes Switching loss Temperature control Voltage control |
| title | Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode |
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