Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode

Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode

A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage V F up to 2.5 V (66 A/cm 2 ) and a V F rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Q rr and consequently rever...

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Hauptverfasser: Bauer, J.G., Duetemeyer, T., Hille, F., Humbel, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Computational fluid dynamics
Plasma measurements
Plasma temperature
Power semiconductor devices
Semiconductor device measurement
Semiconductor diodes
Switching loss
Temperature control
Voltage control
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Zusammenfassung:A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage V F up to 2.5 V (66 A/cm 2 ) and a V F rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Q rr and consequently reverse recovery energy E rec of more than 35% have been achieved in comparison with a state of the art 6.5 kV emitter controlled diode.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2008.4538892