Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications

Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications

In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced...

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Hauptverfasser: Seok Ho Bang, Sang Jin Lee, Mun Kyo Lee, Dong Sik Ko, Sung-Woon Moon, Yong Hyun Baek, Min Han, Seok Gyu Choi, Tae Jong Baek, Byoung-Chul Jun, Dong Chul Park, Sam-Dong Kim, Jin Koo Rhee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Circuit simulation
Couplers
Fabrication
Gallium arsenide
HEMTs
mHEMTs
Microwave devices
Radio frequency
Schottky diodes
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Zusammenfassung:In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.
DOI:10.1109/GSMM.2008.4534555