A 45nm NOR Flash Technology with Self-Aligned Contacts and 0.024μm2 Cell Size for Multi-level Applications

A 45nm NOR Flash Technology with Self-Aligned Contacts and 0.024μm2 Cell Size for Multi-level Applications

A 45nm NOR flash technology featuring a self aligned contact ETOX architecture is demonstrated on a 1 Gbit MLC product having a die area of 30.05mm 2 . The cell size of 0.024μm 2 is the smallest NOR cell reported to date and is manufactured entirely with dry lithography tools. With an aggressively s...

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Hauptverfasser: Fastow, R., Banerjee, R., Bjeletich, P., Brand, A., Chao, H., Gorman, J., Guo, X., Heng, J.B., Koenigsfeld, N., Ma, S., Masad, A., Soss, S., Woo, B.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Educational institutions
Flash memory
Implants
Lithography
Manufacturing
Plugs
Rails
Robustness
Space technology
Tungsten
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Beschreibung
Zusammenfassung:A 45nm NOR flash technology featuring a self aligned contact ETOX architecture is demonstrated on a 1 Gbit MLC product having a die area of 30.05mm 2 . The cell size of 0.024μm 2 is the smallest NOR cell reported to date and is manufactured entirely with dry lithography tools. With an aggressively scaled drain space of 100nm and gate length of 110nm, the cell shows robust short channel behavior, and excellent cycling behavior.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2008.4530808