A High Performance and Scalable FinFET BE-SONOS Device for NAND Flash Memory Application

A high-performance body tied FinFET BE-SONOS device is demonstrated, suitable for NAND Flash memory scaling beyond 30 nm technology node. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, a much higher program/erase speed is obtaine...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Tzu-Hsuan Hsu, Hang-Ting Lue, Wu-Chin Peng, Ya-Chin King, Chia-Wei Wu, Szu-Yu Wang, Ming-Tsung Wu, Shih-Ping Hong, Jung-Yu Hsieh, Tahone Yang, Kuang-Chao Chen, Kuang-Yeu Hsieh, Liu, R., Chih-Yuan Lu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitors FinFETs Flash memory Functional programming Immune system Iron Lead compounds Nonvolatile memory SONOS devices Tunneling
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!