A High Performance and Scalable FinFET BE-SONOS Device for NAND Flash Memory Application

A High Performance and Scalable FinFET BE-SONOS Device for NAND Flash Memory Application

A high-performance body tied FinFET BE-SONOS device is demonstrated, suitable for NAND Flash memory scaling beyond 30 nm technology node. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, a much higher program/erase speed is obtaine...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tzu-Hsuan Hsu, Hang-Ting Lue, Wu-Chin Peng, Ya-Chin King, Chia-Wei Wu, Szu-Yu Wang, Ming-Tsung Wu, Shih-Ping Hong, Jung-Yu Hsieh, Tahone Yang, Kuang-Chao Chen, Kuang-Yeu Hsieh, Liu, R., Chih-Yuan Lu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitors
FinFETs
Flash memory
Functional programming
Immune system
Iron
Lead compounds
Nonvolatile memory
SONOS devices
Tunneling
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A high-performance body tied FinFET BE-SONOS device is demonstrated, suitable for NAND Flash memory scaling beyond 30 nm technology node. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, a much higher program/erase speed is obtained, owing to the inherent field enhancement (FE) effect around the fin tip. In this work, a very scaled (36 nm) FinFET BE-SONOS with successful NAND array functions, including fast block erase speed (0.6), successful self-boosting program-inhibit window, good read disturb property (>100 K read), and excellent cycling endurance (>10 K) are demonstrated.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2008.4530796