Negative Characteristic Temperature of Long Wavelength InAs/AlGaInAs Quantum Dot Laser Grown on InP Substrates

InAs quantum dot lasers grown on (311)B InP substrates with AlGalnAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift...

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Hauptverfasser:	Alghoraibi, I., Rohel, T., Piron, R., Bertru, N., Paranthoen, C., Elias, G., Nakkar, A., Folliot, H., Le Corre, A., Loualiche, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	AlGaInAs (Q1.2) Delay Electroluminescence Electroluminescence (EL) InAs Quantum dots (QDs) Indium phosphide InP Laser stability Lightwave communication Molecular beam epitaxial growth Molecular beam epitaxy (MBE) Negative characteristic temperateure (T 0 ) Quantum dot lasers Quantum dots laser Quantum well lasers Semiconductor laser Semiconductor lasers Substrates Temperature distribution
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Beschreibung
Zusammenfassung:	InAs quantum dot lasers grown on (311)B InP substrates with AlGalnAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which can not be fitted with a Varshni law, and a large decrease of the laser linewidth. These results can be related to a delayed thermalization of carriers within quantum dot ensemble.
DOI:	10.1109/ICTTA.2008.4530148