In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

In this letter, we report a novel n-channel GaAs MOSFET featuring TaN/HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regio...

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Veröffentlicht in:	IEEE electron device letters 2008-06, Vol.29 (6), p.553-556
Hauptverfasser:	Hock-Chun Chin, Ming Zhu, Chih-Hang Tung, Samudra, G.S., Yee-Chia Yeo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Capacitance-voltage characteristics CMOS technology Design. Technologies. Operation analysis. Testing Dielectric films Electronics Exact sciences and technology GaAs Gallium arsenide high- kappa high-permittivity III-V compound semiconductors Integrated circuits Interface states Interfaces Microelectronic fabrication (materials and surfaces technology) mobility MOSFET MOSFET circuits Ohmic contacts palladium-germanium (PdGe) Passivation semiconductor device fabrication semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon surface passivation Surface treatment Transistors
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