In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

In this letter, we report a novel n-channel GaAs MOSFET featuring TaN/HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regio...

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Veröffentlicht in:IEEE electron device letters 2008-06, Vol.29 (6), p.553-556
Hauptverfasser: Hock-Chun Chin, Ming Zhu, Chih-Hang Tung, Samudra, G.S., Yee-Chia Yeo
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Sprache:eng
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Zusammenfassung:In this letter, we report a novel n-channel GaAs MOSFET featuring TaN/HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regions. With the novel in situ surface passivation, excellent capacitance-voltage characteristics with low-frequency dispersion and small stretch-out can be achieved, indicating low interface state density. This surface-channel GaAs device exhibits excellent transistor output characteristics with a high drain current on/off ratio of 105 and a high peak electron mobility of 1230 cm 2 /V ldr s. In addition, gold contamination concerning CMOS technology can be alleviated with the successful integration of low-resistance PdGe ohmic contacts.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.921393